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Optical Engineering

Infrared photodetectors with SiGe/Si multiple quantum wells
Author(s): R. P. Gamani Karunasiri; Jun Park; Kang Lung Wang; Sang K. Chun
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Paper Abstract

The study of intersubband transitions in both quantum wells and superlattices has rapidly developed to the point where intersubband photodetectors are becoming attractive for a number of applications. This is particularly significant for Si-based heterostructures due to the advantage of monolithic integration with the conventional silicon signal processing electronics, especially for large-area staring FPAs in advanced IR sensor systems. We review experimental observations of hole intersubband transitions in SiGe/Si quantum wells. In addition to intersubband transitions, we also discuss two normal incident absorption processes: intervalence band transition and internal photoemission from 2-D hole gas in the quantum well. Finally, the progress in the application of SiGe/Si multiple quantum well structures for the fabrication of IR detectors operating in both the 2- to 5-μm and 8- to 12-μm ranges is described.

Paper Details

Date Published: 1 May 1994
PDF: 9 pages
Opt. Eng. 33(5) doi: 10.1117/12.165809
Published in: Optical Engineering Volume 33, Issue 5
Show Author Affiliations
R. P. Gamani Karunasiri, Univ. of California/Los Angeles (United States)
Jun Park, Univ. of California/Los Angeles (United States)
Kang Lung Wang, Univ. of California/Los Angeles (United States)
Sang K. Chun, Univ. of California Los Angeles (United States)


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