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Optical Engineering

Heterojunction internal photoemission Si0.7Ge0.3/Si infrared detector
Author(s): True Lon Lin; Jin Suk Park; Sarath D. Gunapala; Eric W. Jones; Hector M. Del Castillo
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Paper Abstract

Single-layer and multilayer Si0.7Ge0.3/Si heterojunction internal photoemission (HIP) detectors with cutoff wavelengths out to ~23 μm have been demonstrated. Near-ideal thermionic emission dark current characteristics and photoresponse at wavelengths up to 20 μm were measured. The cutoff wavelength λc and emission coefficient C1 of the HIP detectors were determined by the modified Fowler plot at the wavelength regime where the corresponding photon energies were smaller than the Fermi energy (~0.15 eV) of the degenerate Si0.7Ge0.3 layers. Similar optical and thermal potential barriers were obtained. The use of multiple Si0.7Ge0.3/Si layers in the stacked HIP detector structure resulted in a significantly increased emission coefficient C1 compared to the single-layer HIP detectors due to an enhanced internal photoemission efficiency without the loss of IR absorption.

Paper Details

PDF: 5 pages
Opt. Eng. 33(3) doi: 10.1117/12.163403
Published in: Optical Engineering Volume 33, Issue 3, March 1994
Show Author Affiliations
True Lon Lin, Jet Propulsion Lab. (United States)
Jin Suk Park, Jet Propulsion Lab. (United States)
Sarath D. Gunapala, AT&T Bell Labs. (United States)
Eric W. Jones, Jet Propulsion Lab. (United States)
Hector M. Del Castillo, Jet Propulsion Lab. (United States)


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