Share Email Print

Optical Engineering

Enhanced optical effect in a high-electron-mobility phototransistor device: two-dimensional modeling considering a realistic velocity-field relation
Author(s): B. B. Pal; H. Mitra; Dharmendra P. Singh
Format Member Price Non-Member Price
PDF $20.00 $25.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

An enhanced optical effect is observed in a high electron mobility transistor device when the radiation is allowed to fall on the gaps of the source, gate, and drain of a n-AlGaAs/GaAs system. A 2-D model is presented considering a realistic velocity field relation of carriers in the n-AlGaAs layer. Due to the incident radiation, a photovoltage is developed across the heterojunction in addition to band-edge discontinuity between the n-AlGaAs and GaAs layers. This photovoltage drags the electrons from the n-AlGaAs layer into the heterointerface, thus significantly enhancing the sheet concentration of 2-D electron gas. The drain current and transconductance of the device increase considerably. Plots have been made for the I-V characteristics and the transconductance versus gate voltage. Also, a ratio of drain current under illumination and drain current under a dark condition has been plotted against the input optical power density, which indicates that the overall gain of the device is enhanced by a factor of more than 10 compared to its dark case.

Paper Details

Date Published: 1 April 1994
PDF: 5 pages
Opt. Eng. 33(4) doi: 10.1117/12.163115
Published in: Optical Engineering Volume 33, Issue 4
Show Author Affiliations
B. B. Pal, Banaras Hindu Univ. (India)
H. Mitra, Banaras Hindu Univ. (India)
Dharmendra P. Singh, Banaras Hindu Univ. (India)

© SPIE. Terms of Use
Back to Top