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Optical Engineering

1040 X 1040 infrared charge sweep device imager with PtSi Schottky-barrier detectors
Author(s): Akira Akiyama; Tatsuro Sasaki; Toshiki Seto; Akiyoshi Mori; Ryuji Ishigaki; Sho Itoh; Naoki Yutani; Masafumi Kimata; Natsuro Tsubouchi
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Paper Abstract

We have developed a 1-Mpixel infrared charge sweep device (IRCSD) imager for thermal imaging in the 3- to 5-μm band. The device of this imager is a 1040 x 1040 monolithic PtSi Schottky-barrier (SB) array using the charge sweep device (CSD) readout architecture. The pixel size is 17 x 17 μm2 and the fill factor of this device is 44%. In this imager system, four video signals are read out from four independent channels on the device. The processing of these four outputs, such as sample and hold (S/H), and offset control and image correction, is performed in parallel, after which these outputs are combined to produce high-definition TV (HDTV; 1125 lines, 30 Hz) format thermal image in real time. The noise-equivalent temperature difference (NETD) with f/1.2 optics at 27°C background is 0.13°C at the HDTV output stage.

Paper Details

Date Published: 1 January 1994
PDF: 8 pages
Opt. Eng. 33(1) doi: 10.1117/12.162277
Published in: Optical Engineering Volume 33, Issue 1
Show Author Affiliations
Akira Akiyama, Japan Defense Agency (Japan)
Tatsuro Sasaki, Japan Defense Agency (Japan)
Toshiki Seto, Mitsubishi Electric Corp. (Japan)
Akiyoshi Mori, Mitsubishi Electric Corp. (Japan)
Ryuji Ishigaki, Mitsubishi Electric Corp. (Japan)
Sho Itoh, Mitsubishi Electric Corp. (Japan)
Naoki Yutani, Mitsubishi Electric Corp. (Japan)
Masafumi Kimata, Mitsubishi Electric Corp. (Japan)
Natsuro Tsubouchi, Mitsubishi Electric Corp. (Japan)


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