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Optical Engineering

Photothermal absorption microscopy of defects in ZrO2 and MgF2 single-layer films
Author(s): Michael Reichling; Eberhard Welsch; Angela Duparre; Eckart Matthias
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Paper Abstract

Photothermal displacement microscopy has been used for the characterization of ZrO2 and MgF2 single-layer thin films to detect absorption inhomogeneities at λ=514 nm. Images are presented for films of λ/2, λ, and 2λ optical thickness deposited on BK7 glass and SQl quartz substrates. Applying modulation frequencies ranging from 1 to 100 kHz a lateral resolution of several micrometers was obtained. We found that the size and density of the absorption inhomogeneities as well as absorptance depend strongly on the deposition process and weakly on the substrate material. No dependence on thin film thickness was found. The apparent defect density varies with the modulation frequency demonstrating the capability of the photothermal method to localize absorption in various depths of the thin film. Defect densities derived from the photothermal measurements are compared with results from total integrated light scattering (TIS) experiments performed on various samples at is λ = 632 nm. TIS intensities for MgF2 films on glass substrates were about one order of magnitude smaller than those from films on quartz. The latter revealed strong long-range (1-mm) variations of the light scattering intensity. This finding is in accordance with the absorption measurements.

Paper Details

Date Published: 1 April 1994
PDF: 9 pages
Opt. Eng. 33(4) doi: 10.1117/12.160861
Published in: Optical Engineering Volume 33, Issue 4
Show Author Affiliations
Michael Reichling, Freie Univ. Berlin (Germany)
Eberhard Welsch, Institute of Optics and Quantumelectronics (Germany)
Angela Duparre, Fraunhofer-Institute (Germany)
Eckart Matthias, Freie Univ. Berlin (Germany)


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