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Optical Engineering

Heterojunction GexSi1-x/Si infrared detectors and focal plane arrays
Author(s): Bor-Yeu Tsaur; Chenson K. Chen; Susanne A. Paul
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Paper Abstract

Heterojunction GexSi1-x/Si internal-photoemission infrared detectors are being developed for multispectral imaging in the middle-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) spectral bands. The detectors, which are fabricated by molecular beam epitaxy of degenerately doped GexSi1-x heteroepitaxial layers on Si, exhibit high responsivity uniformity, low dark-current noise, tunable cutoff wavelength out to 25 μm, and excellent producibility. High-quality MWIR and LWIR thermal imagery has been obtained for 320-x 244- and 400- x 400-element focal plane arrays consisting of GexSi1-x/Si detectors with cutoff wavelength of ~10 μm and monolithic CCD readout circuitry.

Paper Details

Date Published: 1 January 1994
PDF: 7 pages
Opt. Eng. 33(1) doi: 10.1117/12.151535
Published in: Optical Engineering Volume 33, Issue 1
Show Author Affiliations
Bor-Yeu Tsaur, Massachusetts Institute of Technology (United States)
Chenson K. Chen, Massachusetts Institute of Technology (United States)
Susanne A. Paul, Massachusetts Institute of Technology (United States)

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