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Optical Engineering

Comparison of liquid- and vapor-phase silylation processes for 193-nm positive-tone lithography
Author(s): Mark A. Hartney; Roderick R. Kunz; Lynn M. Eriksen; Douglas C. LaTulipe
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Paper Abstract

Liquid- and vapor-phase silylation processes are compared for a 193-nm positive-tone lithographic process using polyvinylphenol as a resist. The liquid-phase process, using a mixture of xylene, hexamethylcyclotrisilazane, and propylene glycol methyl ether acetate, was found to have higher silylation contrast, better sensitivity, and a smaller proximity effect (a decrease in silylation depth for smaller feature sizes). These factors result in a larger exposure latitude, particularly at feature sizes below 0.5 μm. These advantages are greatly offset, however, by the increased chemical costs, which are estimated to be more than 100 times greater than for the vapor-phase process.

Paper Details

Date Published: 1 October 1993
PDF: 6 pages
Opt. Eng. 32(10) doi: 10.1117/12.146843
Published in: Optical Engineering Volume 32, Issue 10
Show Author Affiliations
Mark A. Hartney, Massachusetts Institute of Technology (United States)
Roderick R. Kunz, Massachusetts Institute of Technology (United States)
Lynn M. Eriksen, Massachussetts Institute of Technology (United States)
Douglas C. LaTulipe, IBM Thomas J. Watson Research Ctr. (United States)

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