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Optical Engineering

Acid-catalyzed single-layer resists for ArF lithography
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Paper Abstract

A positive-tone single-layer resist for use with 193-nm radiation has been developed. The system contains a terpolymer of methyl methacrylate, methacrylic acid, and t-butyl methacrylate, along with a photoacid generator. The chemically amplified deprotection of the t-butyl methacrylate into methacrylic acid increases the polarity of the resist and allows selective dissolution in metal-ion-free aqueous-base solutions. The resist sensitivity is less than 10 mJ/cm2, and its inherent resolution is better than 0.1 μm. These acrylate-based systems have the potential to be both lower in cost and have better environmental stability than the deep ultraviolet chemically amplified resists that use phenolic resins.

Paper Details

Date Published: 1 October 1993
PDF: 5 pages
Opt. Eng. 32(10) doi: 10.1117/12.145955
Published in: Optical Engineering Volume 32, Issue 10
Show Author Affiliations
Roderick R. Kunz, Massachusetts Institute of Technology (United States)
Robert D. Allen, IBM Almaden Research Ctr. (United States)
William D. Hinsberg, IBM Almaden Research Ctr. (United States)
Gregory M. Wallraff, IBM Almaden Research Ctr. (United States)


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