Share Email Print

Optical Engineering

Electroluminescent devices with different insulator/semiconductor interfaces prepared by radio-frequency sputtering
Author(s): Chin-Tsar Hsu; Yan-Kuin Su; Meiso Yokoyama
Format Member Price Non-Member Price
PDF $20.00 $25.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

To evaluate the interface properties of a thin-film electroluminescent (EL) stacked-layer insulator structure, four kinds of samples with different insulating layers are prepared. We found that by using insulating layers with a low resistivity and a high dielectric constant adjacent to the active layer, we can greatly improve the emission characteristics. We also found that the EL device with a glass/indium tin oxide/BaTiO3/ZnS:TbF3/HfO2/Ta2O5/HfO2/Al structure exhibited higher brightness and higher efficiency than the other devices. The highest luminous efficiency η and brightness of 0.9 lm/W and 1000 cd/m2 were obtained, respectively, by applying a 1-kHz sinusoidal wave voltage.

Paper Details

Date Published: 1 August 1993
PDF: 6 pages
Opt. Eng. 32(8) doi: 10.1117/12.143991
Published in: Optical Engineering Volume 32, Issue 8
Show Author Affiliations
Chin-Tsar Hsu, National Cheng Kung Univ. (Taiwan)
Yan-Kuin Su, National Cheng Kung Univ. (Taiwan)
Meiso Yokoyama, National Cheng Kung Univ. (Taiwan)

© SPIE. Terms of Use
Back to Top