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Optical Engineering

Electroluminescent devices with different insulator/semiconductor interfaces prepared by radio-frequency sputtering
Author(s): Chin-Tsar Hsu; Yan-Kuin Su; Meiso Yokoyama
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Paper Abstract

To evaluate the interface properties of a thin-film electroluminescent (EL) stacked-layer insulator structure, four kinds of samples with different insulating layers are prepared. We found that by using insulating layers with a low resistivity and a high dielectric constant adjacent to the active layer, we can greatly improve the emission characteristics. We also found that the EL device with a glass/indium tin oxide/BaTiO3/ZnS:TbF3/HfO2/Ta2O5/HfO2/Al structure exhibited higher brightness and higher efficiency than the other devices. The highest luminous efficiency η and brightness of 0.9 lm/W and 1000 cd/m2 were obtained, respectively, by applying a 1-kHz sinusoidal wave voltage.

Paper Details

Date Published: 1 August 1993
PDF: 6 pages
Opt. Eng. 32(8) doi: 10.1117/12.143991
Published in: Optical Engineering Volume 32, Issue 8
Show Author Affiliations
Chin-Tsar Hsu, National Cheng Kung Univ. (Taiwan)
Yan-Kuin Su, National Cheng Kung Univ. (Taiwan)
Meiso Yokoyama, National Cheng Kung Univ. (Taiwan)

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