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Optical Engineering

Vanadium oxide films for optical switching and detection
Author(s): Hubert Jerominek; Francis Picard; Denis Vincent
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Paper Abstract

Structural, electrical, and optical properties of the polycrystalline films of VO2, V2O5, and mixtures of these two oxides are presented. Resistivity change by a factor larger than 103 accompanying the semiconductor-metal phase transition in the VO2 films is reported. A significant contrast in optical transmittance for the two phases of VO2 is observed. High temperature resistivity and optical transmittance of the V2O5 films are shown. Values of the temperature coefficient of resistance in some of the VO2 films in their semiconducting phase and in some of the V2O5 films are as high as 5.2 and 4% per degree Celsius, respectively. Phase switching properties of the VO2-V2O5 films are described. Applications of the fabricated films include optical switches and bobmetric-type light detectors.

Paper Details

Date Published: 1 September 1993
PDF: 8 pages
Opt. Eng. 32(9) doi: 10.1117/12.143951
Published in: Optical Engineering Volume 32, Issue 9
Show Author Affiliations
Hubert Jerominek, National Optics Institute (Canada)
Francis Picard, National Optics Institute (Canada)
Denis Vincent, Defence Research Establishment Valcartier (Canada)


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