Share Email Print

Optical Engineering • new

Structural, electrical, and photoelectric properties of p-NiO/n-CdTe heterojunctions
Author(s): Hryhorii Parkhomenko; Mykhaylo Solovan; Viktor V. Brus; Eduard Maystruk; Pavlo D. Maryanchuk
Format Member Price Non-Member Price
PDF $20.00 $25.00

Paper Abstract

p-NiO/n-CdTe-photosensitive heterojunctions were prepared by the deposition of nickel oxide thin films onto n-type single-crystal CdTe substrates by DC reactive magnetron sputtering. The analysis of capacitance-voltage (C−V) characteristics, measured at different frequencies of the small amplitude AC signal and corrected by the effect of the series resistance, provided evidence of the presence of electrically charged interface states, which significantly affect the measured capacitance. The dominant current transport mechanisms in the heterojunctions were determined at forward and reverse biases. Using “light” I−V characteristics, we determined the open-circuit voltage Voc=0.42  V, the short-circuit current Isc=57.5  μA/cm2, and the fill factor FF=0.24 under white light illumination with the intensity of 80  mW/cm2.

Paper Details

Date Published: 31 January 2018
PDF: 5 pages
Opt. Eng. 57(1) 017116 doi: 10.1117/1.OE.57.1.017116
Published in: Optical Engineering Volume 57, Issue 1
Show Author Affiliations
Hryhorii Parkhomenko, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
Mykhaylo Solovan, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
Viktor V. Brus, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (Germany)
Eduard Maystruk, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
Pavlo D. Maryanchuk, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)

© SPIE. Terms of Use
Back to Top