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Optical Engineering

Effect of iodine doping in the deposition solution and iodine vapor pressure in the sensitization treatment on the properties of PbSe films
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Paper Abstract

Effect of iodine-doping in the deposition solution and iodine vapor pressure during the sensitization process on the morphological, microstructural, electrical, and optical properties of PbSe films was studied. Undoped and iodine-doped PbSe films of polycrystalline particles were coated on thermally oxidized silicon substrates by chemical bath deposition. The PbSe films were oxidized at 380°C for 30 min and then iodinated at different iodine vapor pressures at 380°C for 5 min. When the iodine vapor pressure was below 20 Pa, PbSeO 3 was the main phase formed on the surface of PbSe microcrystals for both undoped and iodine-doped films. As the iodine vapor pressure was increased above 20 Pa, Pb 3 I 2 O 2 and PbI 2 phases were formed in both types of films and PbSeO 3 disappeared in the undoped film. Only the iodine-doped films showed photo response. The sheet resistance and IR signal-to-noise ratio had maximum values at the iodine vapor pressure of 17.5 Pa in the iodine-doped film. The x-ray diffraction spectra, scanning electron microscopy morphologies, and EDS analyses of the sensitized PbSe films show that the main role of iodine in the sensitization is helping solid-state sintering of PbSe microcrystals which may lead to redistribution of oxygen atoms in the effective atomic sites.

Paper Details

Date Published: 14 February 2017
PDF: 10 pages
Opt. Eng. 56(9) 091607 doi: 10.1117/1.OE.56.9.091607
Published in: Optical Engineering Volume 56, Issue 9
Show Author Affiliations
Youngjoon Suh, Korea Institute of Science and Technology (Korea, Republic of)
Sang-Hee Suh, Korea Institute of Science and Technology (Korea, Republic of)


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