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Optical Engineering

Extended wavelength infrared photodetectors
Author(s): Dilip Chauhan; A. G. Unil Perera; Lianhe Li; Li Chen; Suraj P. Khanna; Edmund H. Linfield
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Paper Abstract

Extension of the wavelength threshold of an infrared detector beyond λ t = h c / Δ is demonstrated, without reducing the minimum energy gap ( Δ ) of the material. Specifically, a photodetector designed with Δ = 0.40    eV , and a corresponding λ t = 3.1    μ m , was shown to have an extended threshold of 45    μ m at 5.3 K, at zero bias. Under negative and positive applied bias, this range was further extended to 60 and 68    μ m , respectively, with the photoresponse becoming stronger at increased biases, but the spectral threshold remained relatively constant. The observed wavelength extension arises from an offset between the two potential barriers in the device. Without the offset, another detector with Δ = 0.30    eV showed a photoresponse with the expected wavelength threshold of 4    μ m .

Paper Details

Date Published: 7 February 2017
PDF: 5 pages
Opt. Eng. 56(9) 091605 doi: 10.1117/1.OE.56.9.091605
Published in: Optical Engineering Volume 56, Issue 9
Show Author Affiliations
Dilip Chauhan, Georgia State Univ. (United States)
A. G. Unil Perera, Georgia State Univ. (United States)
Lianhe Li, Univ. of Leeds (United Kingdom)
Li Chen, Univ. of Leeds (United Kingdom)
Suraj P. Khanna, Univ. of Leeds (United Kingdom)
Edmund H. Linfield, Univ. of Leeds (United Kingdom)

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