Share Email Print
cover

Optical Engineering

Significantly enhanced carrier lifetimes of very long-wave infrared absorbers based on strained-layer InAs/GaInSb superlattices
Author(s): Heather J. Haugan; Benjamin V. Olson; Gail J. Brown; Emil A. Kadlec; Jin K. Kim; Eric A. Shaner
Format Member Price Non-Member Price
PDF $20.00 $25.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Significantly improved carrier lifetimes in very long-wave infrared (VLWIR) InAs/GaInSb superlattice (SL) absorbers are demonstrated using time-resolved microwave reflectance (TMR) measurements. A nominal 47.0    InAs / 21.5    Ga 0.75 In 0.25 Sb SL structure that produces an 25    μ m response at 10 K has a minority carrier lifetime of 140 ± 20    ns at 18 K, which is an order-of-magnitude improvement compared with previously reported lifetime values for other VLWIR detector absorbers. This improvement is attributed to the strain-engineered ternary SL design, which offers a variety of epitaxial advantages and ultimately leads to the improvements in the minority carrier lifetime by mitigating defect-mediated Shockley–Read–Hall (SRH) recombination centers. By analyzing the temperature dependence of TMR decay data, the recombination mechanisms and trap states that currently limit the performance of this SL absorber were identified. The results show a general decrease in the long-decay lifetime component, which is dominated by SRH recombination at temperatures below 30    K and by Auger recombination at temperatures above 45    K . Since the strain-balanced ternary SL design offers a reasonably good absorption coefficient and many epitaxial advantages during growth, this VLWIR SL material system should be considered as a competitive candidate for VLWIR photodetector technology.

Paper Details

Date Published: 11 January 2017
PDF: 7 pages
Opt. Eng. 56(9) 091604 doi: 10.1117/1.OE.56.9.091604
Published in: Optical Engineering Volume 56, Issue 9
Show Author Affiliations
Heather J. Haugan, Air Force Research Lab. (United States)
Benjamin V. Olson, Sandia National Labs. (United States)
Gail J. Brown, Air Force Research Lab. (United States)
Emil A. Kadlec, Sandia National Labs. (United States)
Jin K. Kim, Sandia National Labs. (United States)
Eric A. Shaner, Sandia National Labs. (United States)


© SPIE. Terms of Use
Back to Top