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Optical Engineering

Uncooled middle wavelength infrared photoconductors based on (111) and (100) oriented HgCdTe
Author(s): Pawel Madejczyk; Artur Kębłowski; Waldemar Gawron; Piotr Martyniuk; Małgorzata Kopytko; Dawid Stępień; Jaroslaw Rutkowski; Józef Piotrowski; Adam Piotrowski; Antoni Rogalski
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Paper Abstract

We present progress in metal organic chemical vapor deposition (MOCVD) growth of (100) HgCdTe epilayers achieved recently at the Institute of Applied Physics, Military University of Technology and Vigo System S.A. It is shown that MOCVD technology is an excellent tool for the fabrication of different HgCdTe detector structures with a wide range of composition, donor/acceptor doping, and without post grown ex-situ annealing. Surface morphology, residual background concentration, and acceptor doping efficiency are compared in (111) and (100) oriented HgCdTe epilayers. At elevated temperatures, the carrier lifetime in measured p-type photoresistors is determined by Auger 7 process with about one order of magnitude difference between theoretical and experimental values. Particular progress has been achieved in the growth of (100) HgCdTe epilayers for medium wavelength infrared photoconductors operated in high-operating temperature conditions.

Paper Details

Date Published: 5 January 2017
PDF: 6 pages
Opt. Eng. 56(9) 091602 doi: 10.1117/1.OE.56.9.091602
Published in: Optical Engineering Volume 56, Issue 9
Show Author Affiliations
Pawel Madejczyk, Military Univ. of Technology (Poland)
Artur Kębłowski, VIGO System S.A. (Poland)
Waldemar Gawron, Military Univ. of Technology (Poland)
Piotr Martyniuk, Military Univ. of Technology (Poland)
Małgorzata Kopytko, Military Univ. of Technology (Poland)
Dawid Stępień, Military Univ. of Technology (Poland)
Jaroslaw Rutkowski, Military Univ. of Technology (Poland)
Józef Piotrowski, VIGO System S.A. (Poland)
Adam Piotrowski, VIGO System S.A. (Poland)
Antoni Rogalski, Military Univ. of Technology (Poland)


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