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Optical Engineering

Simulation and optimization of optical performance of time-delay-integration complementary metal-oxide-semiconductor image sensor based on hybrid charge-digital accumulation architecture
Author(s): Jing Gao; Rui Huang; Kai-ming Nie; Jiangtao Xu; Yi Li
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Paper Abstract

An analytical model of hybrid accumulation architecture based on charge-domain and digital-domain time-delay-integration complementary metal-oxide-semiconductor image sensor (TDI-CIS) in the scanning direction is proposed. Optical performance of signal-noise-ratio, dynamic range, and modulation transfer function of the charge-domain, digital-domain, and hybrid accumulation scheme is simulated and analyzed. The synthetical evaluation target (SET) is defined to obtain the best performance under different distribution methods of the charge-domain and digital-domain at a fixed TDI stage for a hybrid accumulation scheme. According to the simulation results, the hybrid accumulation scheme whose charge-domain accumulation stage is 8 and digital-domain accumulation stage is 16 has the optimal SET, which is 12.99% higher than a 128-stage digital-domain accumulation scheme and 25% higher than the 128-stage charge-domain accumulation scheme.

Paper Details

Date Published: 30 August 2017
PDF: 10 pages
Opt. Eng. 56(8) 083108 doi: 10.1117/1.OE.56.8.083108
Published in: Optical Engineering Volume 56, Issue 8
Show Author Affiliations
Jing Gao, Tianjin Univ. (China)
Tianjin University, Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianji (China)
Rui Huang, Tianjin Univ. (China)
Kai-ming Nie, Tianjin Univ. (China)
Tianjin University, Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianji (China)
Jiangtao Xu, Tianjin Univ. (China)
Tianjin University, Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianji (China)
Yi Li, Tianjin Univ. (China)


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