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Optical Engineering

Model-free determination of optical constants: application to undoped and Ga-doped ZnO
Author(s): David C. Look; Buguo Wang; Kevin D. Leedy
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Paper Abstract

For single slabs of uniform material, such as bulk semiconductors, we derive closed-form expressions for absorption and reflection coefficients, α and R , respectively, in terms of measured reflectance and transmittance, R m and T m . The formula for α can replace the several commonly used approximations for α as a function of T m and in particular does not require α d 1 , where d is the thickness. Thus, it can be applied to weak impurity absorptions, such as Fe absorption in Fe-doped GaN. Finally, the real ( η ) and imaginary ( κ ) parts of the index of refraction ( n = η + i κ ) can be obtained from α and R and agree well with η and

Paper Details

Date Published: 21 March 2017
PDF: 5 pages
Opt. Eng. 56(3) 034112 doi: 10.1117/1.OE.56.3.034112
Published in: Optical Engineering Volume 56, Issue 3
Show Author Affiliations
David C. Look, Wright State Univ. (United States)
Air Force Research Lab. Sensors Directorate (United States)
Buguo Wang, Wright State Univ. (United States)
Kevin D. Leedy, Air Force Research Lab. Sensors Directorate (United States)


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