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Optical Engineering

Continuous-wave and passively Q-switched <inline-formula< <mml:math display="inline" xmlns:mml=""< <mml:mrow< <mml:mi<Nd</mml:mi< <mml:mo<:</mml:mo< <mml:msub< <mml:mrow< <mml:mi<YVO</mml:mi< </mml:mrow< <mml:mrow< <mml:mn<4</mml:mn< </mml:mrow< </mml:msub< </mml:mrow< </mml:math< </inline-formula< laser at 1085 nm
Author(s): Hongyi Lin; Hong Liu; Xiaohua Huang; Jiyan Zhang
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Paper Abstract

An admirable and efficient Nd : YVO 4 laser at 1085 nm is demonstrated with a compact 35 mm plano-plano cavity. A chosen narrow bandpass filter with high-transmittance (HT) coating at 1064 nm ( T = 96 % ) and optimized part-reflection (PR) coating at 1085 nm ( T = 15 % ) is used as the output coupler. In the continuous-wave (CW) regime, the maximum output power reaches 3110 mW at the pump power of 11.41 W. Based on a Cr:YAG crystal with initial-transmittance of 91%, the first passively Q-switched Nd : YVO 4 laser at 1085 nm is achieved. When the pump power is changed from the threshold of 4.50 to 6.08 W, the dual-wavelength lines at 1064 and 1085 nm are generated simultaneously. However, at the pump power of above 6.08 W, the single-wavelength line at 1085 nm is achieved. The largest output power, the highest peak power, and the narrowest pulse width are 1615 mW, 878 W and 26.2 ns, respectively.

Paper Details

Date Published: 30 November 2017
PDF: 4 pages
Opt. Eng. 56(11) 116118 doi: 10.1117/1.OE.56.11.116118
Published in: Optical Engineering Volume 56, Issue 11
Show Author Affiliations
Hongyi Lin, Xiamen Univ. of Technology (China)
Putian Univ. (China)
Hong Liu, Xiamen Univ. of Technology (China)
Xiaohua Huang, Xiamen Univ. of Technology (China)
Jiyan Zhang, Xiamen Univ. of Technology (China)
Putian Univ. (China)

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