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Optical Engineering

Passively Q-switched ytterbium-doped ScBO3 laser with black phosphorus saturable absorber
Author(s): Dazhi Lu; Zhongben Pan; Rui Zhang; Tianxiang Xu; Ruilong Yang; Bingchao Yang; Zhongyuan Liu; Haohai Yu; Huaijin Zhang; Jiyang Wang
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Paper Abstract

We demonstrate a passively Q-switched Yb3+-dopedScBO3 bulk laser using a black phosphorous (BP) saturable absorber, a two-dimensional semiconductor. The response spectra of BP show that it is suitable as a universal switcher in the spectral range from the visible to midinfrared band. Considering the saturable absorption properties of BP and emission properties of Yb3+-doped crystals, the passively Q-switched bulk laser pulses were realized with the Yb3+:ScBO3 crystal as a gain material and a fabricated BP sample as a Q-switcher. Because of the large energy storage capacity of Yb3+:ScBO3, the maximum output energy is obtained to be 1.4  μJ, which is comparable with the previous reported maximum energy of graphene Q-switched lasers. The obtained results identify the potential capability of BP as a pulse modulator in bulk lasers, and BP plays an increasingly important role in a wide range of its applications, including photonics and optoelectronics.

Paper Details

Date Published: 19 February 2016
PDF: 5 pages
Opt. Eng. 55(8) 081312 doi: 10.1117/1.OE.55.8.081312
Published in: Optical Engineering Volume 55, Issue 8
Show Author Affiliations
Dazhi Lu, Shandong Univ. (China)
Zhongben Pan, China Academy of Engineering Physics (China)
Rui Zhang, Shandong Univ. (China)
Tianxiang Xu, Shandong Univ. (China)
Ruilong Yang, Yanshan Univ. (China)
Bingchao Yang, Yanshan Univ. (China)
Zhongyuan Liu, Yanshan Univ. (China)
Haohai Yu, Shandong Univ. (China)
Huaijin Zhang, Shandong Univ. (China)
Jiyang Wang, Shandong Univ. (China)

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