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Study on the electrical properties of ZnO thin film transistors using pyrochlore Bi1.5Zn(1+y)Nb1.5O(7+y) gate insulators fabricated by RF sputtering
Author(s): Wei Ye; Wei Ren; Peng Shi; Zhuangde Jiang
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Paper Abstract

A series of ZnO thin film transistors (TFTs) using pyrochlore Bi1.5Zn(1+y)Nb1.5O(7+y) (BZN) thin films as gate insulators by RF sputtering has been fabricated. The relations between the zinc content and performance of BZN thin films and ZnO-TFTs are studied. The electrical properties of the ZnO-TFTs with BZN gate insulators as a function of Zn content are discussed. The research results showed that excess Zn (5 mol.%) can significantly enhance the performance of BZN thin films and ZnO-TFTs, which is mainly attributed to the compensation of Zn volatility during fabrication of BZN thin films. At an applied electric field of 250  kV/cm, the leakage current density of BZN thin films with 5 mol.% excess Zn is approximately four order of magnitude lower than that of BZN thin films without excess Zn. The subthreshold and surface state density of ZnO-TFTs were decreased from 684 and 350  mV/dec to 4.5×1012 and 2×1012 cm2, respectively, as Zn content was increased.

Paper Details

Date Published: 21 June 2016
PDF: 8 pages
Opt. Eng. 55(6) 067106 doi: 10.1117/1.OE.55.6.067106
Published in: Optical Engineering Volume 55, Issue 6
Show Author Affiliations
Wei Ye, Xi'an Jiaotong Univ. (China)
Wei Ren, Xi'an Jiaotong Univ. (China)
Peng Shi, Xi'an Jiaotong Univ. (China)
Zhuangde Jiang, Xi'an Jiaotong Univ. (China)

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