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Optical Engineering

Cross-talk characterization of dense single-photon avalanche diode arrays in CMOS 150-nm technology
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Paper Abstract

Cross-talk characterization results of high-fill-factor single-photon avalanche diode (SPAD) arrays in CMOS 150-nm technology are reported and discussed. Three different SPAD structures were designed with two different sizes (15.6 and 25.6  μm pitch) and three guard ring widths (0.6, 1.1, and 1.6  μm). Each SPAD was implemented in an array, composed of 25 (5×5) devices, which can be separately activated. Measurement results show that the average cross-talk probability is well below 1% for the shallow-junction SPAD structure with 15.6  μm pitch and 39.9% fill factor, and 1.45% for the structure with 25.6  μm pitch and 60.6% fill factor. An increase of cross-talk probability with the excess bias voltage is observed.

Paper Details

Date Published: 1 June 2016
PDF: 5 pages
Opt. Eng. 55(6) 067102 doi: 10.1117/1.OE.55.6.067102
Published in: Optical Engineering Volume 55, Issue 6
Show Author Affiliations
Hesong Xu, Fondazione Bruno Kessler (Italy)
Univ. degli Studi di Trento (Italy)
Lucio Pancheri, Univ. degli Studi di Trento (Italy)
Leo H. C. Braga, Fondazione Bruno Kessler (Italy)
Gian-Franco Dalla Betta, Univ. degli Studi di Trento (Italy)
David Stoppa, Fondazione Bruno Kessler (Italy)
Univ. degli Studi di Trento (Italy)


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