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Optical Engineering

Simulated characteristics of a heterojunction phototransistor with Ge1-xSn x alloy as base
Author(s): Dur Vesh Kumar; Ankit Kumar Pandey; Rikmantra Basu; Anuj K. Sharma
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Paper Abstract

Groups III-V compound semiconductors and their alloys are the main photodetecting elements for the entire fiber optic telecommunication band. However, the recent successful growth of Ge 1 - x Sn x alloy on Ge virtual substrates on Si platform makes the group IV alloys a potential competitor. Ge 1 - x Sn x alloy shows direct band gap and has an absorption coefficient almost 10 times higher than that of Ge. The photonic devices are complementary metal–oxide–semiconductor compatible. We have considered an n - Ge / p + - Ge 1 - x Sn x / n - Ge 1 - x Sn x heterojunction phototransistor (HPT) and studied the variations of terminal currents by considering the Gummel Poon model of HPT, and values of optical and current gains, photocurrent, and responsivity have been obtained. The performance of the device as a photodetector at fiber optic communication wavelengths seems quite encouraging to justify the use of GeSn-based HPTs as a replacement of III-IV semiconductor-based photodetectors.

Paper Details

Date Published: 23 December 2016
PDF: 7 pages
Opt. Eng. 55(12) 127103 doi: 10.1117/1.OE.55.12.127103
Published in: Optical Engineering Volume 55, Issue 12
Show Author Affiliations
Dur Vesh Kumar, National Institute of Technology, Delhi (India)
Ankit Kumar Pandey, National Institute of Technology, Delhi (India)
Rikmantra Basu, National Institute of Technology, Delhi (India)
Anuj K. Sharma, National Institute of Technology, Delhi (India)

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