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Optical Engineering • Open Access

Preliminary study on atmospheric-pressure plasma-based chemical dry figuring and finishing of reaction-sintered silicon carbide
Author(s): Xinmin Shen; Hui Deng; Xiaonan Zhang; Kang Peng; Kazuya Yamamura

Paper Abstract

Reaction-sintered silicon carbide (RS-SiC) is a research focus in the field of optical manufacturing. Atmospheric-pressure plasma-based chemical dry figuring and finishing, which consist of plasma chemical vaporization machining (PCVM) and plasma-assisted polishing (PAP), were applied to improve material removal rate (MRR) in rapid figuring and ameliorate surface quality in fine finishing. Through observing the processed RS-SiC sample in PCVM by scanning white-light interferometer (SWLI), the calculated peak-MRR and volume-MRR were 0.533  μm/min and 2.78×10−3  mm3/min, respectively. The comparisons of surface roughness and morphology of the RS-SiC samples before and after PCVM were obtained by the scanning electron microscope and atomic force microscope. It could be found that the processed RS-SiC surface was deteriorated with surface roughness rms 382.116 nm. The evaluations of surface quality of the processed RS-SiC sample in PAP corresponding to different collocations of autorotation speed and revolution speed were obtained by SWLI measurement. The optimal surface roughness rms of the processed RS-SiC sample in PAP was 2.186 nm. There were no subsurface damages, scratches, or residual stresses on the processed sample in PAP. The results indicate that parameters in PAP should be strictly selected, and the optimal parameters can simultaneously obtain high MRR and smooth surface.

Paper Details

Date Published: 18 October 2016
PDF: 8 pages
Opt. Eng. 55(10) 105102 doi: 10.1117/1.OE.55.10.105102
Published in: Optical Engineering Volume 55, Issue 10
Show Author Affiliations
Xinmin Shen, The PLA Univ. of Science and Technology (China)
Hui Deng, Singapore Institute of Manufacturing Technology (Singapore)
Xiaonan Zhang, The PLA Univ. of Science and Technology (China)
Kang Peng, The PLA Univ. of Science and Technology (China)
Kazuya Yamamura, Osaka Univ. (Japan)


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