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Optical Engineering

Thick detection zone single-photon avalanche diode fabricated in 0.35  μm complementary metal-oxide semiconductors
Author(s): Bernhard Steindl; Reinhard Enne; Horst Zimmermann
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Paper Abstract

An avalanche photodiode (APD) fabricated in 0.35  μm high-voltage complementary metal-oxide semiconductor (CMOS) technology, which was originally optimized for linear mode applications, is characterized in Geiger mode operation. This work shows that the used design concept is also suitable for single-photon detection applications and achieves a photon detection efficiency of 22.1% at 785 nm due to a thick detection zone and 3.5 V excess bias. At this operation point, the single-photon APD achieves good results regarding afterpulsing probability (3.4%) and dark count rate (46 kHz) with respect to the large active diameter of 86  μm.

Paper Details

Date Published: 22 May 2015
PDF: 3 pages
Opt. Eng. 54(5) 050503 doi: 10.1117/1.OE.54.5.050503
Published in: Optical Engineering Volume 54, Issue 5
Show Author Affiliations
Bernhard Steindl, Technische Univ. Wien (Austria)
Reinhard Enne, Technische Univ. Wien (Austria)
Horst Zimmermann, Technische Univ. Wien (Austria)


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