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Optical Engineering

High temperature coefficient of resistance molybdenum oxide and nickel oxide thin films for microbolometer applications
Author(s): Yao O. Jin; David Saint-John; Nikolas Podraza; Thomas N. Jackson; Mark W. Horn
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Paper Abstract

Molybdenum oxide (MoOx) and nickel oxide (NiOx) thin films were deposited by reactive biased target ion beam deposition. MoOx thin film resistivity varied from 3 to 2000  Ω·cm with a temperature coefficient of resistance (TCR) from −1.7% to −3.2%/K, and NiOx thin film resistivity varied from 1 to 300  Ω·cm with a TCR from −2.2% to −3.3%/K, both easily controlled by varying the oxygen partial pressure. Biased target ion beam deposited high TCR MoOx and NiOx thin films are polycrystalline semiconductors and have good stability in air. Compared with commonly used vanadium oxide thin films, MoOx or NiOx thin films offer improved process control for resistive temperature sensors.

Paper Details

Date Published: 4 March 2015
PDF: 6 pages
Opt. Eng. 54(3) 037101 doi: 10.1117/1.OE.54.3.037101
Published in: Optical Engineering Volume 54, Issue 3
Show Author Affiliations
Yao O. Jin, The Pennsylvania State Univ. (United States)
David Saint-John, The Pennsylvania State Univ. (United States)
Nikolas Podraza, The Univ. of Toledo (United States)
Thomas N. Jackson, The Pennsylvania State Univ. (United States)
Mark W. Horn, The Pennsylvania State Univ. (United States)


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