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Optical Engineering

Si-based infrared optical filters
Author(s): Armandas Balčytis; Meguya Ryu; Gediminas Seniutinas; Yoshiaki Nishijima; Yuta Hikima; Massimiliano Zamengo; Raimondas Petruškevičius; Junko Morikawa; Saulius Juodkazis
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Paper Abstract

Pyramidal silicon nanospikes, termed black-Si (b-Si), with controlled height of 0.2 to 1  μm, were fabricated by plasma etching over 3-in wafers and were shown to act as variable density filters in a wide range of the IR spectrum 2.5 to 20  μm, with transmission and its spectral gradient dependent on the height of the spikes. Such variable density IR filters can be utilized for imaging and monitoring applications. Narrow IR notch filters were realized with gold mesh arrays on Si wafers prospective for applications in surface-enhanced IR absorption sensing and “cold materials” for heat radiation into atmospheric IR transmission window. Both types of filters for IR: spectrally variable and notch are made by simple fabrication methods.

Paper Details

Date Published: 14 December 2015
PDF: 5 pages
Opt. Eng. 54(12) 127103 doi: 10.1117/1.OE.54.12.127103
Published in: Optical Engineering Volume 54, Issue 12
Show Author Affiliations
Armandas Balčytis, Swinburne Univ. of Technology (Australia)
Ctr. for Physical Sciences and Technology (Lithuania)
Meguya Ryu, Tokyo Institute of Technology (Japan)
Gediminas Seniutinas, Swinburne Univ. of Technology (Australia)
Yoshiaki Nishijima, Yokohama National Univ. (Japan)
Yuta Hikima, Kyoto Univ. (Japan)
Massimiliano Zamengo, Tokyo Institute of Technology (Japan)
Raimondas Petruškevičius, Ctr. for Physical Sciences and Technology (Lithuania)
Junko Morikawa, Tokyo Institute of Technology (Japan)
Saulius Juodkazis, Swinburne Univ. of Technology (Australia)
King Abdulaziz Univ. (Saudi Arabia)

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