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Optical Engineering

Mercury–cadmium–telluride thin layers as subterahertz and infrared detectors
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Paper Abstract

Issues associated with the development and exploitation of infrared (IR) and terahertz (THz) radiation detectors based on a narrow-gap “HgCdTe” semiconductor have been discussed. This mercury–cadmium–telluride (MCT) semiconductor can be applied for two-color detector operation in IR and sub-THz spectral ranges. Two-color uncooled and cooled down to 78 K narrow-gap MCT semiconductor thin layers grown using the liquid phase epitaxy or molecular beam epitaxy methods on high-resistive “CdZnTe” or “GaAs” substrates, with bow-type antennas, have been considered both as sub-THz direct detection bolometers and 3 to 10  μm IR photoconductors. Their room temperature noise equivalent power at the frequency ν140  GHz and signal-to-noise ratio at the spectral sensitivity maximum under monochromatic (spectral resolution ∼0.1  μm) globar illumination reached the following values; ∼4.5×1010  W/Hz1/2 and ∼50, respectively. Aspheric lenses used for obtaining the images in the sub-THz spectral region were designed and manufactured. With these detectors, about 140 and 270 GHz imaging data have been demonstrated.

Paper Details

Date Published: 10 December 2015
PDF: 8 pages
Opt. Eng. 54(12) 127102 doi: 10.1117/1.OE.54.12.127102
Published in: Optical Engineering Volume 54, Issue 12
Show Author Affiliations
Fedir F. Sizov, V.E. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Zinoviia F. Tsybrii, V.E. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Vyacheslav V. Zabudsky, V.E. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Oleksandr G. Golenkov, V.E. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Volodymyr A. Petryiakov, V.E. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Sergey A. Dvoretsky, A.V. Rzhanov Institute of Semiconductor Physics (Russia)
Nikolai Michailov, A.V. Rzhanov Institute of Semiconductor Physics (Russia)
Anna V. Shevchik-Shekera, V.E. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Ihor O. Lysiuk, V.E. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Ernesto Dieguez, Univ. Autónoma de Madrid (Spain)


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