Share Email Print

Optical Engineering

Optimized double-sided pattern design on a patterned sapphire substrate for flip-chip GaN-based light-emitting diodes
Author(s): Zhen Che; Jun Zhang; Xinyu Yu; Mengyuan Xie; Jianhui Yu; Huihui Lu; Yunhan Luo; Heyuan Guan; Zhe Chen
Format Member Price Non-Member Price
PDF $20.00 $25.00

Paper Abstract

This study reports on the development and testing of a cost- and time-effective means to optimize a double-sided hemispherical patterned sapphire substrate (PSS) for highly efficient flip-chip GaN-based light-emitting diodes (LEDs). A simulation is conducted to study how light extraction efficiency (LEE) changed as a function of alteration in the parameters of the unit hemisphere for LEDs that are fabricated on a hemispherical PSS. Results show that the LEE of LED flip chip could be enhanced with the optimized hemispherical PSS by over 0.508 and is ∼115.3% higher than that of flip-chip LEDs with non-PSS. This study confirms the high efficiency and excellent capability of the optimized hemispherical PSS pattern to improve LED efficacy.

Paper Details

Date Published: 18 November 2015
PDF: 6 pages
Opt. Eng. 54(11) 115108 doi: 10.1117/1.OE.54.11.115108
Published in: Optical Engineering Volume 54, Issue 11
Show Author Affiliations
Zhen Che, Jinan Univ. (China)
Jun Zhang, Jinan Univ. (China)
Xinyu Yu, Jinan Univ. (China)
Mengyuan Xie, Jinan Univ. (China)
Jianhui Yu, Jinan Univ. (China)
Huihui Lu, Jinan Univ. (China)
Yunhan Luo, Jinan Univ. (China)
Heyuan Guan, Jinan Univ. (China)
Zhe Chen, Jinan Univ. (China)

© SPIE. Terms of Use
Back to Top