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Optical Engineering

Interfacial properties of Ga-doped ZnO thin films on Si
Author(s): David C. Look; Bruce B. Claflin; Arnold M. Kiefer; Kevin D. Leedy
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Paper Abstract

Ga-doped ZnO films of thicknesses 3 to 500 nm were grown on Si at 200°C by pulsed-laser deposition in 10 mTorr of Ar. Sheet carrier concentration ns and mobility μ were measured at room temperature by the Hall effect and were fitted, respectively, to the equations n s (d)=n(∞)(d−δd) and μ(d)=μ(∞)/[1+d ∗ /(d−δd)] , where n(∞) is the predicted volume carrier concentration at d=∞ (the bulk value), δd is the thickness of the dead layer (if any), μ(∞) is the predicted mobility at d=∞ , and d ∗ is a figure of merit for the electrical properties of the interface. The fitted values of d ∗[/sup] and δd were ∼23 and ∼11  nm , respectively. X-ray reflectance results were consistent with an ∼3-nm -thick interfacial layer of significantly lower density than that of bulk ZnO. X-ray photoelectron spectroscopy measurements showed an ∼10-nm -thick interfacial region in which the Ga peaks at ∼3.8% , well above the average value of 2.4% found in the bulk of the film.

Paper Details

Date Published: 26 August 2014
PDF: 5 pages
Opt. Eng. 53(8) 087108 doi: 10.1117/1.OE.53.8.087108
Published in: Optical Engineering Volume 53, Issue 8
Show Author Affiliations
David C. Look, Wright State Univ. (United States)
Wyle (United States)
Air Force Research Lab. (United States)
Bruce B. Claflin, Air Force Research Lab. (United States)
Arnold M. Kiefer, Air Force Research Lab. (United States)
Kevin D. Leedy, Air Force Research Lab. (United States)


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