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Optical Engineering • Open Access

Demonstration of a quick process to achieve buried heterostructure quantum cascade laser leading to high power and wall plug efficiency

Paper Abstract

Together with the optimal basic design, buried heterostructure quantum cascade laser (BH-QCL) with semi-insulating regrowth offers a unique possibility to achieve an effective thermal dissipation and lateral single mode. We demonstrate here the realization of BH-QCLs with a single-step regrowth of highly resistive (<1×108   ohm⋅cm ) semi-insulating InP:Fe in <45  min for the first time in a flexible hydride vapor phase epitaxy process for burying ridges etched down to 10 to 15  μm depth, both with and without mask overhang. The fabricated BH-QCLs emitting at ∼4.7 and ∼5.5  μm were characterized. 2-mm-long 5.5-μm lasers with a ridge width of 17 to 22  μm , regrown with mask overhang, exhibited no leakage current. Large width and high doping in the structure did not permit high current density for continuous wave (CW) operation. 5-mm-long 4.7-μm BH-QCLs of ridge widths varying from 6 to 14  μm regrown without mask overhang, besides being spatially monomode, TM00 , exhibited wall plug efficiency (WPE) of ∼8 to 9% with an output power of 1.5 to 2.5 W at room temperature and under CW operation. Thus, we demonstrate a quick, flexible, and single-step regrowth process with good planarization for realizing buried QCLs leading to monomode, high power, and high WPE.

Paper Details

Date Published: 14 August 2014
PDF: 6 pages
Opt. Eng. 53(8) 087104 doi: 10.1117/1.OE.53.8.087104
Published in: Optical Engineering Volume 53, Issue 8
Show Author Affiliations
Wondwosen Metaferia, KTH Royal Institute of Technology (Sweden)
Bouzid Simozrag, III-V Lab. (France)
Carl Junesand, KTH Royal Institute of Technology (Sweden)
Epiclarus AB (Sweden)
Yan-Ting Sun, KTH Royal Institute of Technology (Sweden)
Mathieu Carras, III-V Lab. (France)
Romain Blanchard, Harvard School of Engineering and Applied Sciences (United States)
Federico Capasso, Harvard School of Engineering and Applied Sciences (United States)
Sebastian Lourdudoss, KTH Royal Institute of Technology (Sweden)


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