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Optical Engineering

BiCMOS-integrated photodiode exploiting drift enhancement
Author(s): Robert Swoboda; Kerstin Schneider-Hornstein; Holger Wille; Gernot Langguth; Horst Zimmermann
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Paper Abstract

A vertical pin photodiode with a thick intrinsic layer is integrated in a 0.5-μm BiCMOS process. The reverse bias of the photodiode can be increased far above the circuit supply voltage, enabling a high-drift velocity. Therefore, a highly efficient and very fast photodiode is achieved. Rise/fall times down to 94  ps/141  ps at a bias of 17 V were measured for a wavelength of 660 nm. The bandwidth was increased from 1.1 GHz at 3 V to 2.9 GHz at 17 V due to the drift enhancement. A quantum efficiency of 85% with a 660-nm light was verified. The technological measures to avoid negative effects on an NPN transistor due to the Kirk effect caused by the low-doped I-layer epitaxy are described. With a high-energy collector implant, the NPN transit frequency is held above 20 GHz. CMOS devices are unaffected. This photodiode is suitable for a wide variety of high-sensitivity optical sensor applications, for optical communications, for fiber-in-the-home applications, and for optical interconnects.

Paper Details

Date Published: 11 August 2014
PDF: 4 pages
Opt. Eng. 53(8) 087103 doi: 10.1117/1.OE.53.8.087103
Published in: Optical Engineering Volume 53, Issue 8
Show Author Affiliations
Robert Swoboda, Technische Univ. Wien (Austria)
Avago Technolgies Fiber Austria GmbH (Austria)
Kerstin Schneider-Hornstein, Technische Univ. Wien (Austria)
Holger Wille, Infineon Technologies AG (Germany)
Gernot Langguth, Infineon Technologies AG (Germany)
Horst Zimmermann, Technische Univ. Wien (Austria)


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