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Optical Engineering

InGaAs PIN photodetectors integrated and vertically coupled with silicon-on-insulator waveguides
Author(s): Zhiqi Wang; Chao Qiu; Zhen Sheng; Aimin Wu; Xi Wang; Shichang Zou; Fuwan Gan
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Paper Abstract

Heterogeneous integration of III–V materials with silicon-on-insulator (SOI) waveguide circuitry by an adhesive die-to-wafer bonding process has been proposed as a solution to Si-based lasers and photodetectors. Here, we present the design and optimization of an InGaAs PIN photodetector vertically coupled with the underlying SOI waveguide, which could be readily fabricated using this bonding process. With the help of grating couplers, a thick bonding layer of 2.5

Paper Details

Date Published: 5 May 2014
PDF: 5 pages
Opt. Eng. 53(5) 057101 doi: 10.1117/1.OE.53.5.057101
Published in: Optical Engineering Volume 53, Issue 5
Show Author Affiliations
Zhiqi Wang, Shanghai Institute of Microsystem and Information Technology (China)
Univ. of Chinese Academy of Sciences (China)
Chao Qiu, Shanghai Institute of Microsystem and Information Technology (China)
Zhen Sheng, Shanghai Institute of Microsystem and Information Technology (China)
Aimin Wu, Shanghai Institute of Microsystem and Information Technology (China)
Xi Wang, Shanghai Institute of Microsystem and Information Technology (China)
Shichang Zou, Shanghai Institute of Microsystem and Information Technology (China)
Fuwan Gan, Shanghai Institute of Microsystem and Information Technology (China)


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