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Optical Engineering

Avalanche photodiode with high responsivity in 0.35 μm CMOS
Author(s): Wolfgang Gaberl; Kerstin Schneider-Hornstein; Reinhard Enne; Bernhard Steindl
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Paper Abstract

The presented linear mode avalanche photodiode (APD) uses the standard layers and process steps available in the 0.35-μ m Si bulk CMOS process. Due to a low-doped epitaxial layer with a resistivity of 664  Ω cm , a deep intrinsic zone is realized to enable a large depleted absorption region at already moderate bias voltages and therefore ensures a high low-voltage responsivity. In combination with avalanche gain at high bias voltages, this leads to an overall responsivity of 1.7×10 5   A/W at 1.1 nW optical input power and 670-nm wavelength. The maximum achieved avalanche gain was 4.94×10 5 . The maximum −3  dB frequency of 700 MHz was measured at a reverse bias voltage of 30 V and an optical input power of 14.7 μ W.

Paper Details

Date Published: 3 April 2014
PDF: 5 pages
Opt. Eng. 53(4) 043105 doi: 10.1117/1.OE.53.4.043105
Published in: Optical Engineering Volume 53, Issue 4
Show Author Affiliations
Wolfgang Gaberl, Technische Univ. Wien (Austria)
Kerstin Schneider-Hornstein, Technische Univ. Wien (Austria)
Reinhard Enne, Technische Univ. Wien (Austria)
Bernhard Steindl, Technische Univ. Wien (Austria)

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