Share Email Print
cover

Optical Engineering

Avalanche photodiode with high responsivity in 0.35 μm CMOS
Author(s): Wolfgang Gaberl; Kerstin Schneider-Hornstein; Reinhard Enne; Bernhard Steindl
Format Member Price Non-Member Price
PDF $20.00 $25.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The presented linear mode avalanche photodiode (APD) uses the standard layers and process steps available in the 0.35-μ m Si bulk CMOS process. Due to a low-doped epitaxial layer with a resistivity of 664  Ω cm , a deep intrinsic zone is realized to enable a large depleted absorption region at already moderate bias voltages and therefore ensures a high low-voltage responsivity. In combination with avalanche gain at high bias voltages, this leads to an overall responsivity of 1.7×10 5   A/W at 1.1 nW optical input power and 670-nm wavelength. The maximum achieved avalanche gain was 4.94×10 5 . The maximum −3  dB frequency of 700 MHz was measured at a reverse bias voltage of 30 V and an optical input power of 14.7 μ W.

Paper Details

Date Published: 3 April 2014
PDF: 5 pages
Opt. Eng. 53(4) 043105 doi: 10.1117/1.OE.53.4.043105
Published in: Optical Engineering Volume 53, Issue 4
Show Author Affiliations
Wolfgang Gaberl, Technische Univ. Wien (Austria)
Kerstin Schneider-Hornstein, Technische Univ. Wien (Austria)
Reinhard Enne, Technische Univ. Wien (Austria)
Bernhard Steindl, Technische Univ. Wien (Austria)


© SPIE. Terms of Use
Back to Top