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Optical Engineering

pn photodiode in 0.35‐μm high-voltage CMOS with 1.2-GHz bandwidth high-voltage CMOS with 1.2-GHz bandwidth
Author(s): Reinhard Enne; Bernhard Steindl; Kerstin Schneider-Hornstein; Horst Zimmermann
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Paper Abstract

A pn-junction photodiode with a bandwidth in the GHz range is presented. This photodiode is fabricated in a standard 0.35‐μm high-voltage CMOS process with deep n-wells which can isolate negative substrate potentials down to −100  V from the MOS transistors. This photodiode can, therefore, be implemented together with circuits on the same chip. At a reverse bias voltage of −90  V, a bandwidth of 1.2 GHz was measured for 670-nm light. The breakdown voltage of this photodiode is about −180  V.

Paper Details

Date Published: 25 November 2014
PDF: 3 pages
Opt. Eng. 53(11) 116114 doi: 10.1117/1.OE.53.11.116114
Published in: Optical Engineering Volume 53, Issue 11
Show Author Affiliations
Reinhard Enne, Technische Univ. Wien (Austria)
Bernhard Steindl, Technische Univ. Wien (Austria)
Kerstin Schneider-Hornstein, Technische Univ. Wien (Austria)
Horst Zimmermann, Technische Univ. Wien (Austria)

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