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Optical Engineering

Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
Author(s): Burak Tekcan; Cagla Ozgit-Akgun; Sami Bolat; Necmi Biyikli; Ali K. Okyay
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Paper Abstract

Proof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are demonstrated. Electrical and optical characteristics of the fabricated devices are investigated. Dark current values as low as 14 pA at a 30 V reverse bias are obtained. Fabricated devices exhibit a 15× UV/VIS rejection ratio based on photoresponsivity values at 200 nm (UV) and 390 nm (VIS) wavelengths. These devices can offer a promising alternative for flexible optoelectronics and the complementary metal oxide semiconductor integration of such devices.

Paper Details

Date Published: 9 October 2014
PDF: 4 pages
Opt. Eng. 53(10) 107106 doi: 10.1117/1.OE.53.10.107106
Published in: Optical Engineering Volume 53, Issue 10
Show Author Affiliations
Burak Tekcan, Bilkent Univ. (Turkey)
Cagla Ozgit-Akgun, Bilkent Univ. (Turkey)
Sami Bolat, Bilkent Univ. (Turkey)
Necmi Biyikli, Bilkent Univ. (Turkey)
Ali K. Okyay, Bilkent Univ. (Turkey)

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