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Optical Engineering

Optimization of the planar microcavity structure in bottom-emitting gallium nitride light-emitting diode
Author(s): Haosu Zhang; Jun Zhu; Guofan Jin; Zhendong Zhu
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Paper Abstract

An optimized microcavity structure is proposed to enhance the emission efficiency of the bottom-emitting gallium nitride (GaN) light emitting diode. This structure contains a SiO 2 layer below the n -GaN layer to enhance transmission through the bottom layer and a SiO [sub]2 /Ag reflector coated on the p -GaN layer to raise the reflection on the upper surface of the GaN layer. The thicknesses of the two SiO 2 layers are optimized to improve the light extraction efficiency and internal quantum efficiency. The 200-nm-thick p -GaN layer signifies high current injection efficiency. The calculations reveal that the TM-polarized intensity in the normal direction from the optimized sample is about eight times stronger than that from the reference sample. Our designation offers the advantages of simplifying the fabricating process and reducing the manufacturing cost.

Paper Details

Date Published: 15 April 2013
PDF: 6 pages
Opt. Eng. 52(9) 091715 doi: 10.1117/1.OE.52.9.091715
Published in: Optical Engineering Volume 52, Issue 9
Show Author Affiliations
Haosu Zhang, Tsinghua Univ. (China)
Jun Zhu, Tsinghua Univ. (China)
Guofan Jin, Tsinghua Univ. (China)
Zhendong Zhu, Tsinghua Univ. (China)


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