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Optical Engineering

Electro-optical effect in hydrogenated amorphous silicon-based waveguide-integrated p-i-p and p-i-n configurations
Author(s): Sandro Rao; Giuseppe Coppola; Caterina Summonte; Mariano A. Gioffrè; Francesco G. Della Corte
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Paper Abstract

A p-i-p configuration of an electro-optical modulator based on hydrogenated amorphous silicon (a-Si:H) is characterized and compared with an a-Si:H based p-i-n modulator. In particular, we estimate the performances in terms of optical losses, voltage-length product, and bandwidth at λ=1550  nm for waveguide-integrated p-i-p versus p-i-n configurations. Both devices are fabricated on a silicon substrate by plasma enhanced chemical vapor deposition at low temperature ensuring the back-end integration with a CMOS microchip. We demonstrate a factor of merit for the p-i-p waveguide integrated Fabry-Perot resonator of Vπ×Lπ=19  V×cm allowing the design of shorter devices with respect to p-i-n structure.

Paper Details

Date Published: 19 August 2013
PDF: 6 pages
Opt. Eng. 52(8) 087110 doi: 10.1117/1.OE.52.8.087110
Published in: Optical Engineering Volume 52, Issue 8
Show Author Affiliations
Sandro Rao, Univ. Mediterranea di Reggio Calabria (Italy)
Giuseppe Coppola, Istituto per la Microelettronica e Microsistemi (Italy)
Caterina Summonte, Istituto per la Microelettronica e Microsistemi (Italy)
Mariano A. Gioffrè, Istituto per la Microelettronica e Microsistemi (Italy)
Francesco G. Della Corte, Univ. Mediterranea di Reggio Calabria (Italy)

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