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Optical Engineering

Dynamic range and sensitivity improvement in near-infrared detectors using silicon germanium bipolar complementary metal-oxide semiconductor technology
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Paper Abstract

Classically gated infrared (IR) detectors have been implemented using charge-coupled devices (CCD). Bipolar complementary metal-oxide semiconductor (BiCMOS) technology emerged as a viable alternative platform for development. BiCMOS technology has a number of advantages over CCD and conventional CMOS technology, of which increased switching speed is one. The pixel topology used in this work is a reversed-biased diode connected heterojunction bipolar transistor. The disadvantage of CMOS detectors is the increased readout noise due to the increased on-chip switching compared to CCD, which degrades dynamic range (DR) and sensitivity. This yields increased switching speeds compared to conventional bipolar junction transistors. Sensitivity improved from 50  mA/W (peak) at 430 nm in CCD detectors to 180  mA/W (peak) (or 180,000  V/W ) at 665 nm in BiCMOS detectors. Other CMOS IR detectors previously published in the literature showed sensitivity values from 2750 to 5000  V/W or 100  mA/W . The DR also improved from 47 and 53 dB to 70 dB. The sensitivity of conventional CCD detectors previously published is around 53  mA/W . The second advantage is that detection in the near-IR band with conventional silicon integrated technology is possible. This work has shown increased detection capabilities up to 1.1 μm compared to Si detectors.

Paper Details

Date Published: 3 April 2013
PDF: 6 pages
Opt. Eng. 52(4) 044001 doi: 10.1117/1.OE.52.4.044001
Published in: Optical Engineering Volume 52, Issue 4
Show Author Affiliations
Johan Venter, Univ. of Pretoria (South Africa)
Saurabh Sinha, Univ. of Pretoria (South Africa)


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