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Optical Engineering • Open Access

Improving light-emitting diode performance through sapphire substrate double-side patterning
Author(s): Ho Ju Kang; Sang Uk Cho; Eung-Soo Kim; Chang-Seok Kim; Myung-Yung Jeong

Paper Abstract

Here, we present a new double-side patterned sapphire substrate methodology that improves the efficiency of gallium nitride-light emitting diodes (GaN-LEDs). The light extraction efficiency of GaN-based LEDs was analyzed through the use of a ray-tracing simulation. The extraction efficiency was simulated using patterned sapphire substrate LEDs with a variety of shapes, depths, sizes, and spacing. Through the optimal patterning of the various factors, high extraction efficiency was realized and subsequently improved upon. The thermal LED characteristics were analyzed through the use of the COMSOL general heat transfer module. The LEDs patterned on the sapphire substrate were fabricated using nano imprint lithography. We found that the output power of the double-side patterned LED was 52% greater than that of a flat LED. The thermal resistance of the double side patterned LED was 9.5  K/W less than that found for the flat LED.

Paper Details

Date Published: 12 February 2013
PDF: 8 pages
Opt. Eng. 52(2) 023002 doi: 10.1117/1.OE.52.2.023002
Published in: Optical Engineering Volume 52, Issue 2
Show Author Affiliations
Ho Ju Kang, Pusan National Univ. (Korea, Republic of)
Sang Uk Cho, Pusan National Univ. (Korea, Republic of)
Eung-Soo Kim, Pusan Univ. of Foreign Studies (Korea, Republic of)
Chang-Seok Kim, Pusan National Univ. (Korea, Republic of)
Myung-Yung Jeong, Pusan National Univ. (Korea, Republic of)

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