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Optical Engineering

Intersubband absorption properties of GaAs/AlxGa1−xAs asymmetric quantum well based on optical difference frequency
Author(s): Xiao-Long Cao; Jian-Quan Yao; Kai Zhong; Degang Xu
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Paper Abstract

Al0.5Ga0.5As/GaAs/Al0.2Ga0.8As multiple asymmetric quantum well (AQW) have been investigated based on optical difference frequency in the 9 to 11 μm region. Under an intense resonant excitation from a dual-wavelength CO2 laser, the saturation intensity of intersubband absorption for pump waves is estimated to be 0.3  MW/cm2. As the well width variation, the position of absorption peak for pump waves and the absorption of terahertz (THz) wave by DFG show concomitant changes. For an AQW of 7 nm deep well-width and 27 nm total well-width, the maximum of absorption for the THz wave is 6.01×105  m−1 when the two pump wavelengths are 9.69 and 10.64 μm, respectively. These manipulative transitions in AQW can be applied to tunable optical semiconductor devices and implemented in THz wave devices to achieve additional functionalities.

Paper Details

Date Published: 7 January 2013
PDF: 6 pages
Opt. Eng. 52(1) 014001 doi: 10.1117/1.OE.52.1.014001
Published in: Optical Engineering Volume 52, Issue 1
Show Author Affiliations
Xiao-Long Cao, Tianjin Univ. (China)
Jian-Quan Yao, Tianjin Univ. (China)
Kai Zhong, Tianjin Univ. (China)
Degang Xu, Tianjin Univ. (China)


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