Share Email Print
cover

Optical Engineering

Single-heterostructure laser diode producing a 6  W/40  ps optical pulse from a 20 μm stripe width
Author(s): Brigitte Lanz; Juha T. Kostamovaara; Sergey N. Vainshtein; Vladimir M. Lantratov; Nikolay Kalyuzhnyy
Format Member Price Non-Member Price
PDF $20.00 $25.00

Paper Abstract

A compact, low-cost semiconductor laser diode producing 40 ps full width at half maximum (FWHM) single-spike lasing pulses with 6 Watts peak power from a 20 μm stripe width is realized in the form of a simple single-heterostructure, grown by metal-organic chemical vapor deposition. The structure possesses a linearly graded doping profile extending from the p+ and n+ sides towards the p-n junction. This laser diode is operated under room temperature conditions and applies pumping current pulses (roughly 10 to 20  A/2 to 3 ns FWHM) achievable with a commercially available silicon avalanche transistor as an electrical switch.

Paper Details

Date Published: 10 May 2012
PDF: 4 pages
Opt. Eng. 51(5) 050503 doi: 10.1117/1.OE.51.5.050503
Published in: Optical Engineering Volume 51, Issue 5
Show Author Affiliations
Brigitte Lanz, Univ. of Oulu (Finland)
Juha T. Kostamovaara, Univ. of Oulu (Finland)
Sergey N. Vainshtein, Univ. of Oulu (Finland)
Vladimir M. Lantratov, Ioffe Physico-Technical Institute (Russian Federation)
Nikolay Kalyuzhnyy, Ioffe Physico-Technical Institute (Russian Federation)


© SPIE. Terms of Use
Back to Top