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Optical Engineering

Temperature dependence on photosensitive area extension in mercury cadmium telluride photodiodes using laser beam induced current
Author(s): Yongguo Chen; Weida Hu; Xiaoshuang Chen; Zhenhua Ye; Jun Wang; Xiaofang Wang; Chenhui Yu; Wei Lu
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Paper Abstract

We report on the temperature-dependent extension of n-type inversion regions in mercury cadmium telluride (HgCdTe) photodiodes at low temperatures (87 K) compared to inversion regions at room temperature (300 K). Laser-beam-induced-current (LBIC) measurement techniques are used to obtain the photosensitive area extensions of n-type inversion in HgCdTe photodiodes for typical n+-on-p HgCdTe photovoltaic IR detectors. The effect of temperature on the extension of n-type conversion region is investigated by considering the sign of the LBIC signal. Theoretical results show that the hole concentration decreases in multidoped HgCdTe due to the freeze-out effect as the temperature decreases. Consequently, hole concentration is much lower than electron concentration at 87 K. The n-type inversion region extension is shown to be caused with the p-to-n type conversion.

Paper Details

Date Published: 29 March 2012
PDF: 6 pages
Opt. Eng. 51(3) 036401 doi: 10.1117/1.OE.51.3.036401
Published in: Optical Engineering Volume 51, Issue 3
Show Author Affiliations
Yongguo Chen, Shanghai Institute of Technical Physics (China)
Weida Hu, Shanghai Institute of Technical Physics (China)
Xiaoshuang Chen, Shanghai Institute of Technical Physics (China)
Zhenhua Ye, Shanghai Institute of Technical Physics (China)
Jun Wang, Shanghai Institute of Technical Physics (China)
Xiaofang Wang, Shanghai Institute of Technical Physics (China)
Chenhui Yu, Shanghai Institute of Technical Physics (China)
Wei Lu, Shanghai Institute of Technical Physics (China)


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