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Optical Engineering

Analysis of carrier dynamic effects in transistor lasers
Author(s): Ashkan Horri; Seyedeh Zahra Mirmoeini; Rahim Faez
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Paper Abstract

We present an analytical model to analyze the influence of carrier dynamics on the static and dynamic responses of transistor laser (TL). Our analysis is based on solving the continuity equation and the rate equations which incorporate the virtual states as a conversion mechanism. We show that the details of the dc and small signal behavior of transistor lasers are strongly affected by the escape and capture times of carriers in quantum well (QW). Also, the effects of carrier recombination lifetime in the quantum well and base regions on the TL static and dynamic performances are investigated.

Paper Details

Date Published: 13 March 2012
PDF: 7 pages
Opt. Eng. 51(2) 024202 doi: 10.1117/1.OE.51.2.024202
Published in: Optical Engineering Volume 51, Issue 2
Show Author Affiliations
Ashkan Horri, Islamic Azad Univ. (Iran, Islamic Republic of)
Seyedeh Zahra Mirmoeini, Islamic Azad Univ. (Iran, Islamic Republic of)
Rahim Faez, Sharif Univ. of Technology (Iran, Islamic Republic of)

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