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Journal of Applied Remote Sensing • Open Access

Comprehensive analysis of new near-infrared avalanche photodiode structure
Author(s): Krzysztof Czuba; Jaroslaw Jurenczyk; Janusz B. Kaniewski

Paper Abstract

The essential steps in simulations of modern separate absorption, grading, charge, and multiplication avalanche photodiode and their results are discussed. All simulations were performed using two commercial technology computer-aided design type software packages, namely Silvaco ATLAS and Crosslight APSYS. Comparison between those two frameworks was made and differences between them were pointed out. Several examples of the influence of changes made in individual layers on overall device characteristics have been shown. Proper selection of models and their parameters as well as its significance on results has been illustrated. Additionally, default values of material parameters were revised and adequate values from the literature were entered. Simulated characteristics of optimized structure were compared with ones obtained from measurements of real devices (e.g., current-voltage curves). Finally, properties of crucial layers in the structure were discussed.

Paper Details

Date Published: 19 February 2014
PDF: 9 pages
J. Appl. Rem. Sens. 8(1) 084999 doi: 10.1117/1.JRS.8.084999
Published in: Journal of Applied Remote Sensing Volume 8, Issue 1
Show Author Affiliations
Krzysztof Czuba, Institute of Electron Technology (Poland)
Jaroslaw Jurenczyk, Institute of Electron Technology (Poland)
Janusz B. Kaniewski, Institute of Electron Technology (Poland)

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