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Journal of Photonics for Energy

Structural and electrical investigations of a-Si:H(i) and a-Si∶H(n+) stacked layers for improving the interface and passivation qualities
Author(s): Yu-Lin Hsieh; Chien-Chieh Lee; Chia-Cheng Lu; Yiin-Kuen Fuh; Jenq-Yang Chang; Ju-Yi Lee; Tomi T. Li
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Paper Abstract

A symmetrically stacked structure [(a-Si∶H(n+)/a-Si:H(i)/CZ wafer (n)/a-Si:H(i)/a-Si:H(n+)] was used to optimize the growth process conditions of the n-type hydrogenated amorphous silicon [a-Si∶H(n+)] thin films. Here a-Si:H(n+) film was used as back surface field (BSF) layer for the silicon heterojunction solar cell and all stacked films were prepared by conventional radio-frequency plasma-enhanced chemical vapor deposition. The characterizations of the effective carrier lifetime (τeff), electrical and structural properties, as well as correlation with the hydrogen dilution ratio (R = H2∕SiH4) were systematically discussed with the emphasis on the effectiveness of the passivation layer using the lifetime tester, spectroscopic ellipsometry, and hall measurement. High quality of a stacked BSF layer (intrinsic/n-type a-Si:H layer) with effective carrier lifetime of 1.8 ms can be consistently obtained. This improved passivation layer can be primarily attributed to the synergy of chemical and field effect to significantly reduce the surface recombination.

Paper Details

Date Published: 14 September 2017
PDF: 7 pages
J. Photon. Energy 7(3) 035503 doi: 10.1117/1.JPE.7.035503
Published in: Journal of Photonics for Energy Volume 7, Issue 3
Show Author Affiliations
Yu-Lin Hsieh, National Central Univ. (Taiwan)
Chien-Chieh Lee, National Central Univ. (Taiwan)
Chia-Cheng Lu, National Central Univ. (Taiwan)
Yiin-Kuen Fuh, National Central Univ. (Taiwan)
Jenq-Yang Chang, National Central Univ. (Taiwan)
Ju-Yi Lee, National Central Univ. (Taiwan)
Tomi T. Li, National Central Univ. (Taiwan)


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