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Journal of Photonics for Energy • Open Access

Effect of Si doping and sunlight concentration on the performance of InAs/GaAs quantum dot solar cells
Author(s): Shunya Naito; Katsuhisa Yoshida; Naoya Miyashita; Ryo Tamaki; Takuya Hoshii; Yoshitaka Okada

Paper Abstract

For intermediate band solar cells, the control of the carrier filling ratio in intermediate band is important to achieve high efficiency. We have investigated the effect of carrier doping of InAs/GaAs quantum dots (QDs) with Si and sunlight concentration on the quantum dots solar cell (QDSC) characteristics. The prefilling by Si doping of InAs/GaAs QDs was performed using two methods: modulation or δ -doping and direct doping. A gradual recovery in the open-circuit voltage with increasing Si doping concentration was observed, and it suggested a decrease of recombination via Si-doped QD states. Under high-concentrated sunlight illumination, QD states were additionally filled with photocarriers, and the open-circuit voltage increased nonlinearly with concentration ratio in both the nondoped and Si-doped QDSCs.

Paper Details

Date Published: 22 June 2017
PDF: 9 pages
J. Photon. Energy 7(2) 025505 doi: 10.1117/1.JPE.7.025505
Published in: Journal of Photonics for Energy Volume 7, Issue 2
Show Author Affiliations
Shunya Naito, The Univ. of Tokyo (Japan)
Katsuhisa Yoshida, RCAST, The Univ. of Tokyo (Japan)
Naoya Miyashita, RCAST, The Univ. of Tokyo (Japan)
Ryo Tamaki, RCAST, The Univ. of Tokyo (Japan)
Takuya Hoshii, RCAST, The Univ. of Tokyo (Japan)
Yoshitaka Okada, RCAST, The Univ. of Tokyo (Japan)


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