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Journal of Photonics for Energy

Investigation of optical and electrical properties of GaN-based blue light-emitting diodes with various quantum well thicknesses
Author(s): Ying-Wen Lin; Chun-Kai Wang; Yu-Zung Chiou; Hung-Ming Chang; Shoou-Jinn Chang
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Paper Abstract

Optical and electrical properties of gallium nitride (GaN)-based blue light-emitting diodes (LEDs) with various indium gallium nitride (InGaN) quantum well (QW) thicknesses were investigated. As the QW thickness was increased, the light output power of GaN-based LEDs also increased. The increase can be attributed to the increase in the carrier radiative recombination rate in the active region. However, the turn-on voltages of these fabricated LEDs are different. This was attributed to the increase in the polarization field with increasing QW thickness. In regard to the hot/cold factor, LEDs with a thicker QW achieved better performance at a low-injection current owing to the lower defect density. The hot/cold factor at a high-injection current would be mainly influenced by the efficiency droop mechanism.

Paper Details

Date Published: 9 July 2015
PDF: 8 pages
J. Photon. Energy. 5(1) 057612 doi: 10.1117/1.JPE.5.057612
Published in: Journal of Photonics for Energy Volume 5, Issue 1
Show Author Affiliations
Ying-Wen Lin, Southern Taiwan Univ. of Science & Technology (Taiwan)
Chun-Kai Wang, Southern Taiwan Univ. of Science & Technology (Taiwan)
Yu-Zung Chiou, Southern Taiwan Univ. of Science & Technology (Taiwan)
Hung-Ming Chang, National Cheng Kung Univ. (Taiwan)
Shoou-Jinn Chang, National Cheng Kung Univ. (Taiwan)


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