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Journal of Photonics for Energy

Performance of hetero junction with intrinsic thin-layer solar cell depending upon contact resistivity of front electrode
Author(s): Youngseok Lee; Sangmyeong Han; Sunbo Kim; Sk Md Iftiquar; Youn-Jung Lee; Jinsu Yoo; Vinh Ai Dao; Junsin Yi
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Paper Abstract

Low temperature curing of Ag paste for electrode formation in silicon hetero junction (SHJ) solar cells is important for providing better device characteristics. Ag paste is composed of solvent, various organic materials, and additives; hence its electrical and mechanical adhesion properties depend on the curing conditions. The adhesion of the Ag paste was determined by scratch test, whereas the specific contact resistance was measured using the transfer length method. Various Ag electrodes were formed at various curing temperatures within the temperature range of 160°C–240°C, at 20°C intervals. The curing time was also varied for another set of Ag electrodes. With 200°C temperature and for 20-min curing, the critical load of 20.06 N and specific contact resistance of 19.61  mΩcm 2 were observed. Using the same conditions, the efficiency of the SHJ solar cell was found to be improved by 3.8%.

Paper Details

Date Published: 26 May 2014
PDF: 9 pages
J. Photon. Energy 4(1) 043094 doi: 10.1117/1.JPE.4.043094
Published in: Journal of Photonics for Energy Volume 4, Issue 1
Show Author Affiliations
Youngseok Lee, Sungkyunkwan Univ. (Korea, Republic of)
Sangmyeong Han, Sungkyunkwan Univ. (Korea, Republic of)
Sunbo Kim, Sungkyunkwan Univ. (Korea, Republic of)
Sk Md Iftiquar, Sungkyunkwan Univ. (Korea, Republic of)
Youn-Jung Lee, Sungkyunkwan Univ. (Korea, Republic of)
Jinsu Yoo, Korea Institute of Energy Research (Korea, Republic of)
Vinh Ai Dao, Sungkyunkwan Univ. (Korea, Republic of)
Junsin Yi, Sungkyunkwan Univ. (Korea, Republic of)

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