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Journal of Photonics for Energy

Efficiency analysis and electronic structures of 3C-SiC and 6H-SiC with 3d elements impurities as intermediate band photovoltaics
Author(s): Hamid Heidarzadeh; Ali Rostami; Mahboubeh Dolatyari; Ghasem Rostami
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Paper Abstract

Optimal efficiency calculations for 3C-SiC- and 6H-SiC-based intermediate band (IB) solar cells are presented. Using detailed balance methods, it is shown that the conversion efficiency of IB SiC-based solar cells is very sensitive to IB position, type of spectrum, and concentration of the incident light. Under a 1000 suns concentration and AM1.5 spectrum irradiation, a maximum efficiency of 55.9% is theoretically achieved for 3C-SiC with the IB located at 0.79 eV up to the valence band of the host material. Under the same conditions, a theoretical maximum efficiency of 49.7% is achieved with an IB located at 0.84 eV below the conduction band of the 6H-SiC. Based on the obtained theoretical results, the formation of an isolated IB in the appropriate position is demonstrated for Ni-doped 3C-SiC and Mn-doped 6H-SiC using the density function theory method which leads to an enhancement in the absorption coefficient in the ranges of the solar spectrum.

Paper Details

Date Published: 8 October 2014
PDF: 12 pages
J. Photon. Energy. 4(1) 042098 doi: 10.1117/1.JPE.4.042098
Published in: Journal of Photonics for Energy Volume 4, Issue 1
Show Author Affiliations
Hamid Heidarzadeh, Univ. of Tabriz (Iran, Islamic Republic of)
Ali Rostami, Univ. of Tabriz (Iran, Islamic Republic of)
Mahboubeh Dolatyari, Univ. of Tabriz (Iran, Islamic Republic of)
Ghasem Rostami, Univ. of Tabriz (Iran)

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