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Journal of Photonics for Energy • Open Access

Analysis of bulk heterojunction material parameters using lateral device structures
Author(s): Eric Danielson; Zi-En Ooi; Kelly Liang; Joshua Morris; Christopher J. Lombardo; Ananth Dodabalapur

Paper Abstract

We review the key optoelectronic properties of lateral organic bulk heterojunction (BHJ) device structures with asymmetric contacts. These structures are used to develop a detailed model of charge transport and recombination properties within materials used for organic photovoltaics. They permit a variety of direct measurement techniques, such as nonlinear optical microscopy and <italic<in situ</italic< potentiometry, as well as photoconductive gain and carrier drift length studies from photocurrent measurements. We present a theoretical framework that describes the charge transport physics within these devices. The experimental results presented are in agreement with this framework and can be used to measure carrier concentrations, recombination coefficients, and carrier mobilities within BHJ materials. Lateral device structures offer a useful complement to measurements on vertical photovoltaic structures and provide a more complete and detailed picture of organic BHJ materials.

Paper Details

Date Published: 25 July 2014
PDF: 17 pages
J. Photon. Energy. 4(1) 040994 doi: 10.1117/1.JPE.4.040994
Published in: Journal of Photonics for Energy Volume 4, Issue 1
Show Author Affiliations
Eric Danielson, The Univ. of Texas at Austin (United States)
Zi-En Ooi, A*STAR Institute of Materials Research and Engineering (Singapore)
Kelly Liang, The Univ. of Texas at Austin (United States)
Joshua Morris, The Univ. of Texas at Austin (United States)
Christopher J. Lombardo, Harvard School of Engineering and Applied Sciences (United States)
Ananth Dodabalapur, The Univ. of Texas at Austin (United States)


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